MCB8D3N10YH is an N-channel MOSFET fabricated with Split Gate Trench technology, housed in a D2-PAK package measuring 15.87 mm x 14.60 mm x 10.60 mm. It has a drain-source voltage rating of 100 V, continuous drain current of 75 A at 25°C and 53 A at 100°C, and total power dissipation of 100 W. The device features a thermal resistance of 1.5°C/W junction-to-case and 45°C/W junction-to-ambient. It supports a single pulse avalanche energy of 156 mJ, with a gate threshold voltage range of 2.0 V to 4.0 V and on-resistance of 6.9 mΩ to 8.3 mΩ at 10 V gate-source voltage. The MOSFET is RoHS compliant, halogen-free, meets UL 94 V-0 flammability rating, and operates with a junction temperature range of -55°C to +175°C.
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MCB8D3N10YH is an N-channel MOSFET fabricated with Split Gate Trench technology, housed in a D2-PAK package measuring 15.87 mm x 14.60 mm x 10.60 mm. It has a drain-source voltage rating of 100 V, continuous drain current of 75 A at 25°C and 53 A at 100°C, and total power dissipation of 100 W. The device features a thermal resistance of 1.5°C/W junction-to-case and 45°C/W junction-to-ambient. It supports a single pulse avalanche energy of 156 mJ, with a gate threshold voltage range of 2.0 V to 4.0 V and on-resistance of 6.9 mΩ to 8.3 mΩ at 10 V gate-source voltage. The MOSFET is RoHS compliant, halogen-free, meets UL 94 V-0 flammability rating, and operates with a junction temperature range of -55°C to +175°C.
