MCB2D5N10Y is an N-channel MOSFET in a D2-PAK package with a drain-source voltage rating of 100 V and a continuous drain current of 246 A at 25°C. It features split gate trench technology, a thermal resistance of 40°C/W junction-to-ambient, and 0.5°C/W junction-to-case. The device operates from -55°C to +175°C, has a gate threshold voltage of 2.0 to 4.0 V, and a typical on-resistance of 2.3 mΩ at 10 V gate voltage. It meets UL 94 V-0 flammability rating, is RoHS compliant, and halogen-free. The part is suitable for high-power switching applications and includes a reverse recovery time of 92 ns and total gate charge of 166 nC.
Datasheet Summary Powered by GS/AI
MCB2D5N10Y is an N-channel MOSFET in a D2-PAK package with a drain-source voltage rating of 100 V and a continuous drain current of 246 A at 25°C. It features split gate trench technology, a thermal resistance of 40°C/W junction-to-ambient, and 0.5°C/W junction-to-case. The device operates from -55°C to +175°C, has a gate threshold voltage of 2.0 to 4.0 V, and a typical on-resistance of 2.3 mΩ at 10 V gate voltage. It meets UL 94 V-0 flammability rating, is RoHS compliant, and halogen-free. The part is suitable for high-power switching applications and includes a reverse recovery time of 92 ns and total gate charge of 166 nC.
