Micro Commercial Components Corp. Single FETs, MOSFETs MCB200N06YB-TP

The MCB200N06YB is an N-channel MOSFET with split gate trench technology, designed for high-efficiency switching applications. It is packaged in a D2-PAK with dimensions ranging from 8.40 to 9.40 mm in length, 9.60 to 10.60 mm in width, and 14.60 to 15.87 mm in height. The device supports a maximum drain-source voltage of 60 V and a continuous drain current of 200 A at 25°C, reducing to 125 A at 100°C. Its maximum power dissipation is 260 W, with a thermal resistance of 28°C/W from junction to ambient. The on-resistance is 2.35 to 3.9 mΩ at 10 V gate voltage and 20 A drain current. It is RoHS compliant, halogen-free, and meets UL 94 V-0 flammability rating. The operating junction temperature range is -55°C to +150°C.