The MCACL2D8N03YLK-TP is an N-channel MOSFET using Split Gate Trench Technology, packaged in a PDFN5060 case with dimensions of 5.0 mm by 6.0 mm. It has a drain-source voltage rating of 30 V and a continuous drain current of 130 A at 25°C, reducing to 82 A at 100°C. The device supports a pulsed drain current of 520 A and dissipates up to 71 W. Thermal resistance is 1.75°C/W junction-to-case and 60°C/W junction-to-ambient. It features a gate-source voltage limit of ±12 V, a gate threshold voltage range of 0.6 to 1.4 V, and a drain-source on-resistance of 2.5 to 3.5 mΩ at 10 V gate drive. The device includes a body diode with forward voltage of 1.2 V and reverse recovery time of 26 ns. Operating and storage temperatures range from -55°C to +150°C. The part is RoHS compliant, halogen-free, and meets UL 94 V-0 flammability rating.
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The MCACL2D8N03YLK-TP is an N-channel MOSFET using Split Gate Trench Technology, packaged in a PDFN5060 case with dimensions of 5.0 mm by 6.0 mm. It has a drain-source voltage rating of 30 V and a continuous drain current of 130 A at 25°C, reducing to 82 A at 100°C. The device supports a pulsed drain current of 520 A and dissipates up to 71 W. Thermal resistance is 1.75°C/W junction-to-case and 60°C/W junction-to-ambient. It features a gate-source voltage limit of ±12 V, a gate threshold voltage range of 0.6 to 1.4 V, and a drain-source on-resistance of 2.5 to 3.5 mΩ at 10 V gate drive. The device includes a body diode with forward voltage of 1.2 V and reverse recovery time of 26 ns. Operating and storage temperatures range from -55°C to +150°C. The part is RoHS compliant, halogen-free, and meets UL 94 V-0 flammability rating.
