Dual N-channel MOSFET in PDFN5060-8D package, designed for high-efficiency switching applications. The device has a drain-source voltage rating of 60 V, continuous drain current of 28 A at 25°C and 18 A at 100°C, and a total power dissipation of 48 W. Junction-to-ambient thermal resistance is 55°C/W, and junction-to-case thermal resistance is 2.6°C/W. Operating and storage temperature range is -55°C to +150°C. Features split gate trench MOSFET technology, is halogen-free, RoHS compliant, and meets UL 94 V-0 flammability rating. Package dimensions are 5.15-5.55 mm (D), 5.95-6.35 mm (E), and 1.00-1.20 mm (A).
DUAL N-CHANNEL MOSFET,PDFN5060-8
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-MCACD28N06Y-TPTR-ND |
| Product Name | FET, MOSFET Arrays |
| Package Type | 8-PowerLDFN |