The MCAC55P03 is a P-channel MOSFET using trench power LV technology, designed for high-efficiency switching applications. It is housed in a DFN5060 package measuring 6.35 mm × 5.64 mm, with a thermal resistance of 55°C/W from junction to ambient and 1.74°C/W from junction to case. The device supports a maximum drain-source voltage of -30 V and a continuous drain current of -35 A at 100°C, with a total power dissipation of 71.8 W. It has a gate-source voltage rating of ±20 V and a junction temperature range of -55°C to +150°C. The package meets UL 94 V-0 flammability rating and is halogen-free and RoHS compliant. The typical on-resistance is 9.5 mΩ at -4.5 V gate-source voltage and -20 A drain current, with a total gate charge of 77.1 nC.
MOSFET P-CH 30 55A DFN5060
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-MCAC55P03-TPTR-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | P-Channel |