The MCAC2D6N04YHE3 is an N-channel MOSFET using Split Gate Trench technology, designed for high-efficiency switching applications. It is packaged in a DFN5060 case measuring 6.35 mm x 5.65 mm, with a maximum drain-source voltage of 40 V and a continuous drain current of 166 A at 25°C. The device features a low on-resistance of 2.6 mΩ at 10 V gate-source voltage and supports a pulsed drain current up to 664 A. It is AEC-Q101 qualified, operates from -55°C to +175°C, and meets UL 94 V-0 flammability standards. The part is RoHS compliant and halogen-free.
N-CHANNEL MOSFET,DFN5060
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-MCAC2D6N04YHE3-TPTR-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel |