Micro Commercial Components Corp. Single FETs, MOSFETs MCAC2D6N04YHE3-TP

Description
N-CHANNEL MOSFET,DFN5060
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Description
N-CHANNEL MOSFET,DFN5060
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Datasheet
Datasheet Summary
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The MCAC2D6N04YHE3 is an N-channel MOSFET using Split Gate Trench technology, designed for high-efficiency switching applications. It is packaged in a DFN5060 case measuring 6.35 mm x 5.65 mm, with a maximum drain-source voltage of 40 V and a continuous drain current of 166 A at 25°C. The device features a low on-resistance of 2.6 mΩ at 10 V gate-source voltage and supports a pulsed drain current up to 664 A. It is AEC-Q101 qualified, operates from -55°C to +175°C, and meets UL 94 V-0 flammability standards. The part is RoHS compliant and halogen-free.

Datasheet Summary
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The MCAC2D6N04YHE3 is an N-channel MOSFET using Split Gate Trench technology, designed for high-efficiency switching applications. It is packaged in a DFN5060 case measuring 6.35 mm x 5.65 mm, with a maximum drain-source voltage of 40 V and a continuous drain current of 166 A at 25°C. The device features a low on-resistance of 2.6 mΩ at 10 V gate-source voltage and supports a pulsed drain current up to 664 A. It is AEC-Q101 qualified, operates from -55°C to +175°C, and meets UL 94 V-0 flammability standards. The part is RoHS compliant and halogen-free.

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Single FETs, MOSFETs - 353-MCAC2D6N04YHE3-TPTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
353-MCAC2D6N04YHE3-TPTR-ND
Single FETs, MOSFETs 353-MCAC2D6N04YHE3-TPTR-ND
N-CHANNEL MOSFET,DFN5060

N-CHANNEL MOSFET,DFN5060

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 353-MCAC2D6N04YHE3-TPTR-ND
Product Name Single FETs, MOSFETs
Polarity N-Channel
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