Micro Commercial Components Corp. Single Bipolar Transistors KTA1267-GR-AP

Description
Bipolar (BJT) Transistor PNP 50V 150mA 80MHz 400mW Through Hole TO-92S
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Description
Bipolar (BJT) Transistor PNP 50V 150mA 80MHz 400mW Through Hole TO-92S
Request a Quote
Datasheet
Datasheet Summary
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PNP bipolar transistor for general-purpose applications, housed in a TO-92S package with dimensions of 1.42 to 1.62 mm in height, 3.90 to 4.10 mm in length, and 3.05 to 3.25 mm in width. It has a collector-base voltage rating of -50 V, collector-emitter voltage of -50 V, and maximum collector current of -150 mA. Power dissipation is 400 mW with a thermal resistance of 312°C/W. The device operates from -55°C to +150°C, meets UL 94 V-0 flammability rating, is RoHS compliant, and has a transition frequency of 80 MHz. The hFE gain is classified as GR, ranging from 200 to 400.

Datasheet Summary
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PNP bipolar transistor for general-purpose applications, housed in a TO-92S package with dimensions of 1.42 to 1.62 mm in height, 3.90 to 4.10 mm in length, and 3.05 to 3.25 mm in width. It has a collector-base voltage rating of -50 V, collector-emitter voltage of -50 V, and maximum collector current of -150 mA. Power dissipation is 400 mW with a thermal resistance of 312°C/W. The device operates from -55°C to +150°C, meets UL 94 V-0 flammability rating, is RoHS compliant, and has a transition frequency of 80 MHz. The hFE gain is classified as GR, ranging from 200 to 400.

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Single Bipolar Transistors - 353-KTA1267-GR-APTB-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
353-KTA1267-GR-APTB-ND
Single Bipolar Transistors 353-KTA1267-GR-APTB-ND
Bipolar (BJT) Transistor PNP 50V 150mA 80MHz 400mW Through Hole TO-92S

Bipolar (BJT) Transistor PNP 50V 150mA 80MHz 400mW Through Hole TO-92S

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 353-KTA1267-GR-APTB-ND
Product Name Single Bipolar Transistors
Polarity PNP
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