Micro Commercial Components Corp. FET, MOSFET Arrays BSS123DWS-TP

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Description
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Datasheet
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The BSS123DWS-TP is a dual N-channel MOSFET in an SOT-363S package, designed for low-power switching applications. It has a drain-source voltage rating of 100 V, a continuous drain current of 125 mA at 100°C, and a total power dissipation of 271 mW. The junction temperature ranges from -55°C to +150°C, with a thermal resistance of 460°C/W. The device is RoHS compliant, halogen-free, and meets UL 94 V-0 flammability requirements. It features a gate-source threshold voltage between 1.0 V and 2.5 V and an on-resistance of 2.6 Ω to 3.6 Ω at VGS = 10 V and ID = 0.2 A. The part is supplied in tape and reel packaging with 3,000 pieces per reel.

Datasheet Summary
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The BSS123DWS-TP is a dual N-channel MOSFET in an SOT-363S package, designed for low-power switching applications. It has a drain-source voltage rating of 100 V, a continuous drain current of 125 mA at 100°C, and a total power dissipation of 271 mW. The junction temperature ranges from -55°C to +150°C, with a thermal resistance of 460°C/W. The device is RoHS compliant, halogen-free, and meets UL 94 V-0 flammability requirements. It features a gate-source threshold voltage between 1.0 V and 2.5 V and an on-resistance of 2.6 Ω to 3.6 Ω at VGS = 10 V and ID = 0.2 A. The part is supplied in tape and reel packaging with 3,000 pieces per reel.

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FET, MOSFET Arrays - 353-BSS123DWS-TPTR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
353-BSS123DWS-TPTR-ND
FET, MOSFET Arrays 353-BSS123DWS-TPTR-ND
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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 353-BSS123DWS-TPTR-ND
Product Name FET, MOSFET Arrays
Package Type 6-TSSOP, SC-88, SOT-363
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