Micro Commercial Components Corp. Single Bipolar Transistors BC857AL3-TP

PNP bipolar transistor in a DFN1006-3 package, rated for a collector-base voltage of -50 V, collector-emitter voltage of -45 V, and emitter-base voltage of -5 V, with a maximum collector current of -100 mA and power dissipation of 150 mW. Operating junction and storage temperature range is -55°C to +150°C. DC current gain (hFE) ranges from 110 to 220 at -5 V collector-emitter voltage and -2 mA collector current. Collector-emitter saturation voltage is -0.65 V at -10 mA collector current and -0.5 mA base current. Transition frequency is 100 MHz. RoHS compliant and halogen-free with UL 94 V-0 flammability rating. Thermal resistance is 833°C/W junction to ambient.