NPN silicon transistor for general-purpose amplification and switching, housed in a TO-92 package measuring 4.30 to 4.70 mm in width and 12.70 mm in length. Rated for a collector-emitter voltage of 80 V, continuous collector current of 1 A, and power dissipation of 1 W, with an operating junction temperature range of -55°C to +150°C. Features a DC current gain (hFE) range of 63 to 160 at 5 mA collector current, a collector-emitter saturation voltage of 0.5 V at 500 mA collector and 50 mA base current, and a transition frequency of 100 MHz. RoHS compliant and moisture sensitive level 1. Lead-free finish with epoxy meeting UL 94 V-0 flammability rating.
Bipolar (BJT) Transistor NPN 80V 1A 100MHz 1W Through Hole TO-92
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-BC639-10-APTB-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | NPN |