PNP silicon bipolar transistor in a TO-92 molded plastic through-hole package for amplification applications, rated for a collector-emitter voltage of -45 V, collector current of -100 mA, and power dissipation of 625 mW at 25°C. The device has a transition frequency of 3150 MHz, a DC current gain range of 420 to 800 for the C-bin variant, and complies with RoHS and UL 94 V-0 standards. Junction temperature operates from -55°C to 150°C. Moisture sensitivity level is 1.
Bipolar (BJT) Transistor PNP 45V 100mA 150MHz 625mW Through Hole TO-92
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-BC557C-BP-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | PNP |