NPN silicon bipolar transistor in TO-92 package, rated for a collector-emitter voltage of 25 V, continuous collector current of 1.5 A, and power dissipation of 1 W. Operating junction and storage temperature ranges from -55℃ to +150℃. Thermal resistance is 125℃/W. Epoxy encapsulation meets UL 94 V-0 flammability rating. RoHS compliant with lead-free finish. DC current gain (hFE) classification D ranges from 160 to 300 at VCE = 1 V and IC = 100 mA. Transition frequency is 100 MHz. Dimensions are 4.30-4.70 mm for width and height, and 12.70 mm for lead length in straight-lead configuration.
Bipolar (BJT) Transistor NPN 25V 1.5A 100MHz 1W Through Hole TO-92
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-8050SS-D-BP-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | NPN |