Micro Commercial Components Corp. Single Bipolar Transistors 2SC2883-Y-TP

NPN silicon power transistor for amplification applications, housed in an SOT-89 package, with a collector current rating of 1500 mA, collector power dissipation of 500 mW, and a junction temperature rating up to 150°C. The device has a collector-emitter breakdown voltage of 30 V, hFE classification of 160-320 for the Y variant, collector-emitter saturation voltage up to 2.0 V at 1.5 A collector current, and a transition frequency of 120 MHz. RoHS compliant with halogen-free option available. Moisture sensitivity level 1, epoxy meets UL 94 V-0.