Micro Commercial Components Corp. Single Bipolar Transistors 2SB1386-Q-TP

PNP silicon epitaxial transistor for general-purpose amplification and switching, available in SOT-89 package with dimensions of 4.70 mm × 2.75 mm × 1.50 mm. Rated for collector-emitter voltage of -20 V, collector current of -5.0 A, and collector power dissipation of 500 mW. Junction and storage temperature range is -55°C to +150°C. Thermal resistance is 250°C/W. DC current gain (hFE) ranges from 120 to 270 for the Q variant. Collector-emitter saturation voltage is -1.0 V at -4 A collector current. Meets UL 94 V-0 flammability rating and is RoHS compliant. Transition frequency is 120 MHz.