Micro Commercial Components Corp. Single Bipolar Transistors 2SB1013-P-TP

The 2SB1013-P is a PNP bipolar transistor designed for general-purpose amplifier applications, housed in an SOT-89 package with dimensions of 4.30 to 4.70 mm in length, 1.55 mm in width, and 2.75 mm in height. It has a collector-base and collector-emitter breakdown voltage of -160 V, an emitter-base voltage rating of -6 V, and a maximum collector current of -1 A. The device dissipates up to 500 mW and features a thermal resistance from junction to ambient of 250 °C/W. Junction and storage temperature ranges span -55 °C to +150 °C. It meets UL 94 V-0 flammability ratings, is halogen-free per RoHS compliance, and has a DC current gain (hFE) range of 160 to 320 for the P rank. The collector-emitter saturation voltage is -1.5 V at -500 mA collector current and -50 mA base current.