N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
MOSFET N-CH 60V 270MA TO236AB Product overview: 2N7002NXBKR from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 270MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 270MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2N7002NXBKR can be used for catalog matching and distributor lookup.
N-Channel 60V 270mA (Ta), 330mA (Tc) 310mW (Ta), 1.67W (Tc) Surface Mount TO-236AB
N-Channel 60V 270mA (Ta), 330mA (Tc) 310mW (Ta), 1.67W (Tc) Surface Mount TO-236AB
N-Channel 60V 270mA (Ta), 330mA (Tc) 310mW (Ta), 1.67W (Tc) Surface Mount TO-236AB
60V 2.8Ω@200mA,10V 2.1V@250uA null SOT-23 MOSFETs ROHS
MOSFET N-CH 60V 270MA TO236AB
MOSFET N-CH 60V 270MA TO236AB
MOSFET, N CH, 60V, 0.27A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:270mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):2.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power RoHS Compliant: Yes
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | DigiKey | LCSC Electronics Technology (HK) Limited | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2N7002NXBKR | 278-2N7002NXBKR | 1727-8642-2-ND | 2N7002NXBKR | 2N7002NXBKR | 2N7002NXBKR | 29AH8644 |
| Product Name | 60 V, N-channel Trench MOSFET | 60V 270MA MOSFET Transistor | Single FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N Ch, 60V, 0.27A, Sot-23; Transistor Polarity Nexperia |
| MOSFET Operating Mode | Enhancement | Enhancement | |||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | 60 volts | |||
| IDSS | 270000 milliamps | 270 milliamps | 270 milliamps | ||||
| VGS(off) | 20 volts | 2.1 volts | |||||
| PD | 310 milliwatts | 400 milliwatts | 310 milliwatts | 310 milliwatts |
