PNP silicon transistor in TO-92 package for general-purpose amplification and switching, with a collector-emitter voltage rating of -50 V, continuous collector current of -100 mA, and power dissipation of 250 mW. Junction and storage temperature range is -55°C to +150°C. Thermal resistance is 500°C/W. Features a DC current gain (hFE) range of 90 to 600, transition frequency of 100 MHz, and RoHS compliance indicated by the "P" suffix. Epoxy encapsulation meets UL 94 V-0 flammability rating. Moisture sensitivity level is 1. Package dimensions are 4.30 to 4.70 mm in width and 12.70 mm in height.
Bipolar (BJT) Transistor PNP 50V 100mA 100MHz 250mW Through Hole TO-92
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-2SA733-P-APTB-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | PNP |