The 2N5551 is an NPN bipolar junction transistor designed for amplifier applications, housed in a TO-92 package with dimensions ranging from 4.30 to 4.70 mm in width and length, and a height of 12.70 mm. It has a collector-emitter voltage rating of 160 V, a continuous collector current of 600 mA, and a power dissipation of 625 mW. The device operates over a junction temperature range of -55°C to +150°C, with a thermal resistance of 200°C/W. The epoxy molding compound meets UL 94 V-0 flammability requirements, and the part is RoHS compliant. The transition frequency is up to 300 MHz, and the DC current gain ranges from 30 to 300 depending on collector current. The 2N5551-BP variant is supplied in bulk packaging containing 100,000 units per carton.
Bipolar (BJT) Transistor NPN 160V 600mA 300MHz 625mW Through Hole TO-92
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-2N5551-BP-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | NPN |