Microdiode Electronics (Shenzhen) Co., Ltd. Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT MMBT5551

Description
160V 300mW 100@10mA,5V 600mA NPN SOT-23 Bipolar Transistors - BJT ROHS
Datasheet
Description
160V 300mW 100@10mA,5V 600mA NPN SOT-23 Bipolar Transistors - BJT ROHS
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT
MMBT5551
Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT MMBT5551
160V 300mW 100@10mA,5V 600mA NPN SOT-23 Bipolar Transistors - BJT ROHS

160V 300mW 100@10mA,5V 600mA NPN SOT-23 Bipolar Transistors - BJT ROHS

Supplier's Site Datasheet
Single Bipolar Transistors - MMBT5551 - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
MMBT5551
Single Bipolar Transistors MMBT5551
TRANS NPN 160V 0.6A SOT23

TRANS NPN 160V 0.6A SOT23

Supplier's Site Datasheet

Technical Specifications

  LCSC Electronics Technology (HK) Limited ODG (Origin Data Global)
Product Category Bipolar RF Transistors Bipolar RF Transistors
Product Number MMBT5551 MMBT5551
Product Name Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT Single Bipolar Transistors
Polarity NPN NPN; NPN
Package Type SOT23 SOT23; TO-236-3, SC-59, SOT-23-3
IC(max) 600 milliamps 600 milliamps
VCEO 160 volts 160 volts
fT 100 MHz
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