Matexcel CVD MoS2 Membrane GRA-LT001

Description
Undoped molybdenum disulfide is a layered N-type semiconductor, which belongs to the transition metal dichalcogenide compound. The bulk band gap is 1.23eV (indirect band gap), and the single-layer MoS2 band gap is ~1.85eV (direct band gap). Storage: Store at room temperature Product overview: Matexcel could offer: 1) A single layer of discretely distributed triangular single crystal grains, with the side length of the triangle generally ranging from tens to one hundred microns. 2) The triangular grains continue to grow into a continuous single-layer film. 3) Multilayer MoS2 continuous film. 4) Substrate: silicon wafer substrate, SiO2/Si substrate and sapphire substrate Size: 10mm*10mm
Datasheet
Description
Undoped molybdenum disulfide is a layered N-type semiconductor, which belongs to the transition metal dichalcogenide compound. The bulk band gap is 1.23eV (indirect band gap), and the single-layer MoS2 band gap is ~1.85eV (direct band gap). Storage: Store at room temperature Product overview: Matexcel could offer: 1) A single layer of discretely distributed triangular single crystal grains, with the side length of the triangle generally ranging from tens to one hundred microns. 2) The triangular grains continue to grow into a continuous single-layer film. 3) Multilayer MoS2 continuous film. 4) Substrate: silicon wafer substrate, SiO2/Si substrate and sapphire substrate Size: 10mm*10mm
Datasheet

Suppliers

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Product
Description
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CVD MoS2 Membrane - GRA-LT001 - Matexcel
Shirley, NY, United States
CVD MoS2 Membrane
GRA-LT001
CVD MoS2 Membrane GRA-LT001
Undoped molybdenum disulfide is a layered N-type semiconductor, which belongs to the transition metal dichalcogenide compound. The bulk band gap is 1.23eV (indirect band gap), and the single-layer MoS2 band gap is ~1.85eV (direct band gap). Storage: Store at room temperature Product overview: Matexcel could offer: 1) A single layer of discretely distributed triangular single crystal grains, with the side length of the triangle generally ranging from tens to one hundred microns. 2) The triangular grains continue to grow into a continuous single-layer film. 3) Multilayer MoS2 continuous film. 4) Substrate: silicon wafer substrate, SiO2/Si substrate and sapphire substrate Size: 10mm*10mm

Undoped molybdenum disulfide is a layered N-type semiconductor, which belongs to the transition metal dichalcogenide compound. The bulk band gap is 1.23eV (indirect band gap), and the single-layer MoS2 band gap is ~1.85eV (direct band gap).

Storage: Store at room temperature

Product overview:

Matexcel could offer:
1) A single layer of discretely distributed triangular single crystal grains, with the side length of the triangle generally ranging from tens to one hundred microns.
2) The triangular grains continue to grow into a continuous single-layer film.
3) Multilayer MoS2 continuous film.
4) Substrate: silicon wafer substrate, SiO2/Si substrate and sapphire substrate

Size: 10mm*10mm

Supplier's Site Datasheet

Technical Specifications

  Matexcel
Product Category Industrial Ceramic Materials
Product Number GRA-LT001
Product Name CVD MoS2 Membrane
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