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Marktech Optoelectronics Phototransistor MTD8600N-T

Description
Marktech offers a large assortment of photo detectors ranging from standard silicon photo diodes to InP Pin Photo Diodes. Our standard InP photo diodes have a spectral sensitivity range in the 400nm to 1000nm range for applications such as optical switching and sensing requiring high speed, consistency and high reliability. Marktech manufactured InP Pin Photo Diodes using InGaAs/InP technology with a spectral sensitivity in the 800nm to 1750nm range for applications requiring low dark current, high speed and sensitivity such as fiber optics and optical communications. In addition Marktech offers Photo Transistors using silicon detectors in the 400nm to 1100 range for applications that require very high sensitivity, uniform response and increased reliability such as card readers and optical sensors. Marktech's detector die can be placed in a variety of packages from metal can TO-5, TO-18 and TO-46 to surface mount and standard 3mm and 5mm plastic packages. We can also incorporate the detector die in custom designed assemblies.
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Suppliers

Company
Product
Description
Supplier Links
Latham, NY, USA
Phototransistor
MTD8600N-T
Phototransistor MTD8600N-T
Marktech offers a large assortment of photo detectors ranging from standard silicon photo diodes to InP Pin Photo Diodes. Our standard InP photo diodes have a spectral sensitivity range in the 400nm to 1000nm range for applications such as optical switching and sensing requiring high speed, consistency and high reliability. Marktech manufactured InP Pin Photo Diodes using InGaAs/InP technology with a spectral sensitivity in the 800nm to 1750nm range for applications requiring low dark current, high speed and sensitivity such as fiber optics and optical communications. In addition Marktech offers Photo Transistors using silicon detectors in the 400nm to 1100 range for applications that require very high sensitivity, uniform response and increased reliability such as card readers and optical sensors. Marktech's detector die can be placed in a variety of packages from metal can TO-5, TO-18 and TO-46 to surface mount and standard 3mm and 5mm plastic packages. We can also incorporate the detector die in custom designed assemblies.

Marktech offers a large assortment of photo detectors ranging from standard silicon photo diodes to InP Pin Photo Diodes. Our standard InP photo diodes have a spectral sensitivity range in the 400nm to 1000nm range for applications such as optical switching and sensing requiring high speed, consistency and high reliability. Marktech manufactured InP Pin Photo Diodes using InGaAs/InP technology with a spectral sensitivity in the 800nm to 1750nm range for applications requiring low dark current, high speed and sensitivity such as fiber optics and optical communications. In addition Marktech offers Photo Transistors using silicon detectors in the 400nm to 1100 range for applications that require very high sensitivity, uniform response and increased reliability such as card readers and optical sensors. Marktech's detector die can be placed in a variety of packages from metal can TO-5, TO-18 and TO-46 to surface mount and standard 3mm and 5mm plastic packages. We can also incorporate the detector die in custom designed assemblies.

Supplier's Site Datasheet
Phototransistors - 1125-1013-ND - DigiKey
Thief River Falls, MN, United States
Phototransistors
1125-1013-ND
Phototransistors 1125-1013-ND
Phototransistors 880nm Top View TO-18-2 Metal Can

Phototransistors 880nm Top View TO-18-2 Metal Can

Supplier's Site Datasheet

Technical Specifications

  Marktech Optoelectronics DigiKey
Product Category Phototransistors Phototransistors
Product Number MTD8600N-T 1125-1013-ND
Product Name Phototransistor Phototransistors
Phototransistor Type Phototransistor Phototransistor
Features Dome Lens
Package Type TO-18 TO-18-2 Metal Can
Mounting Option Surface Mount Plugin
Peak Wavelength 880 nm (8800 Å) 880 nm (8800 Å)
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