MACOM RF FETs, MOSFETs WST4300D-GP4

The WST4300D-GP4 is a gallium nitride (GaN) on silicon carbide (SiC) high electron mobility transistor (HEMT) designed for broadband RF amplification up to 6 GHz with a saturated output power of 45 W at 28 V drain voltage. It features a drain efficiency of up to 80% at low frequencies and operates with a junction temperature up to +225°C. The device is supplied in a die format with a backside source contact, compatible with AuSn solder and gold wire bonding, and meets RoHS requirements. Packaging is in Gel-Pak for 10-piece increments. The part shares all key electrical and thermal characteristics of the WST4300D series, including a 4.5 A drain current limit and gate voltage range of -10 V to +2 V.