MACOM Discrete Semiconductor Products - Transistors - FETs, MOSFETs PXAC210552ND-V1-R5

Description
RF MOSFET LDMOS 4HB1SOF
Description
RF MOSFET LDMOS 4HB1SOF

Suppliers

Company
Product
Description
Supplier Links
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PXAC210552ND-V1-R5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PXAC210552ND-V1-R5
RF MOSFET LDMOS 4HB1SOF

RF MOSFET LDMOS 4HB1SOF

Supplier's Site

Technical Specifications

  Acme Chip Technology Co., Limited
Product Category RF Transistors
Product Number PXAC210552ND-V1-R5
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Packing Method Tape Reel; Tape & Reel (TR)
Unlock Full Specs
to access all available technical data

Similar Products

Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace - - JiuJiang Ingiant Technology Co., Ltd.
JiuJiang Ingiant Technology Co., Ltd.
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace
View Details
GaAs Fet Switches - KCB817 - Micross Components, Inc.
Micross Components, Inc.
GaAs Fet Switches
KCB817
Specs
Operating Frequency 6000 MHz
View Details
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - AUIRF1404ZSTRLCT - Acme Chip Technology Co., Limited
Infineon Technologies AG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
AUIRF1404ZSTRLCT
Specs
Packing Method Bulk; Bulk
View Details
DC - 3.5 GHz, 30 Watt, 32 V GaN RF Power Transistor - T2G4003532-FL - Qorvo
Qorvo
DC - 3.5 GHz, 30 Watt, 32 V GaN RF Power Transistor
T2G4003532-FL
Specs
Transistor Technology / Material GaN
Package Type NI-360
Power Gain 16.5 dB
View Details
2 suppliers