NPN silicon microwave power transistor for radar pulsed applications, operating at 2.7-2.9 GHz with 115 W peak output power, 10% duty cycle, and 200 µs pulse width. Features common base configuration, internal impedance matching, and a hermetic metal/ceramic package. Rated for 65 V collector-emitter voltage, 200 °C junction temperature, and RoHS compliance. Typical power gain is 7.6 dB, collector efficiency is 38%, and load mismatch tolerance is 2:1. Max collector current and power dissipation are not specified.
RF Transistor NPN 65V 115W Chassis Mount
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1465-1132-ND |
| Product Name | Bipolar RF Transistors |
| Polarity | NPN |
