The MAPC-A3009-AB is a 60 W, 28 V GaN on SiC unmatched transistor for RF amplification from DC to 4 GHz, offered in a lead-free air cavity ceramic flange package. It delivers 67% drain efficiency and 16 dB small signal gain at 2.5 GHz under CW operation, with a maximum junction temperature of +225°C and operating temperature range from -40°C to +85°C. The device is RoHS compliant and designed for avionics, military radio, radar, electronic warfare, and ISM applications.
RF MOSTFET N-CH 28VDC 440223
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1465-MAPC-A3009-AB000-ND |
| Product Name | RF FETs, MOSFETs |
| Package Type | 440223 |
