The MAPC-A1107-AB000 is a 120 W GaN on SiC RF amplifier designed for DC to 3 GHz operation, delivering 67% drain efficiency at 3 GHz with 20 dB small signal gain. It is housed in a lead-free air cavity ceramic flange package requiring thermal and RF ground connection. The device supports CW operation with a maximum drain-source voltage of 84 V, gate voltage range of -10 to +2 V, and junction temperature up to +225°C. It operates reliably from -40°C to +85°C and is RoHS compliant. The amplifier is suited for avionics, military radio, radar, and electronic warfare systems.
GAN ON SIC AMPLIFIER, 120 W, 28
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1465-MAPC-A1107-AB000-ND |
| Product Name | RF FETs, MOSFETs |
| Package Type | AC360B-2 |
