The GTVA262701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced surface-mount package with earless flange.
RF MOSFET HEMT 48V H-87265J-2
| Richardson RFPD | Acme Chip Technology Co., Limited | |
|---|---|---|
| Product Category | RF Transistors | RF Transistors |
| Product Number | GTVA262701FA-V2-R0 | GTVA262701FA-V2-R0 |
| Product Name | RF Power Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Transistor Technology / Material | GaN | |
| Package Type | Ceramic Flangeless | H-87265J-2 |
| Power Gain | 17 dB |
