RF Mosfet HEMT 50V 100mA 1.2GHz ~ 1.4GHz 20dB 600W H-36248-2
RF Mosfet HEMT 50V 100mA 1.2GHz ~ 1.4GHz 20dB 600W H-36248-2
RF Mosfet HEMT 50V 100mA 1.2GHz ~ 1.4GHz 20dB 600W H-36248-2
GTVA126001EC is a 600-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 1200 to 1400 MHz frequency band. It features input matching, high efficiency, and thermally-enhanced package.
RF MOSFET HEMT 50V H-36248-2
| DigiKey | Richardson RFPD | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Transistors | RF Transistors | RF Transistors |
| Product Number | 1465-GTVA126001EC-V1-R0TR-ND | GTVA126001EC-V1-R0 | GTVA126001EC-V1-R0 |
| Product Name | RF FETs, MOSFETs | RF Power Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | H-36248-2 | Ceramic Flanged | H-36248-2 |
| Transistor Technology / Material | GaN | ||
| Power Gain | 20 dB |
