CMPA5585030F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC is available in a 10 lead metal/ceramic flanged package for optimal electrical and thermal performance.
RF Amplifier IC 5.5GHz ~ 8.5GHz 440213
IC RF AMP 5.5GHZ-8.5GHZ 440213
| Richardson RFPD | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | RF Amplifiers | RF Amplifiers | RF Amplifiers |
| Product Number | CMPA5585030F | 1465-CMPA5585030F-ND | CMPA5585030F |
| Product Name | RF & MW Power Amplifier | RF Amplifiers | RF and Wireless - RF Amplifiers |
| Amplifier Type | Power Amplifier | Low Noise Amplifier; Power Amplifier | |
| Frequency Range | 5500 to 8500 MHz | 5500 to 8500 MHz | 5500 to 8500 MHz |
| Maximum Gain | 26.5 dB | 26 dB | 26 dB |
| Package Type | Flanged | 440213 |
