MACOM RF FETs, MOSFETs CGHV96130F

RF Mosfet HEMT 40V 1A 8.4GHz ~ 9.6GHz 13.8dB 130W 440217

CGHV96130F is a gallium nitride (GaN) High Electron Mobility Transistor(HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FEToffers excellent power added efficiency in comparison to other technologies. GaNhas superior properties compared to silicon or gallium arsenide, including higherbreakdown voltage, higher saturated electron drift velocity and higher thermalconductivity. GaN HEMTs also offer greater power density and wider bandwidthscompared to GaAs transistors. This IM FET is available in a metal/ceramic flangedpackage for optimal electrical and thermal performance.