CGHV60075D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.
RF MOSFET HEMT 50V DIE
| Richardson RFPD | Acme Chip Technology Co., Limited | |
|---|---|---|
| Product Category | RF Transistors | RF Transistors |
| Product Number | CGHV60075D5-GP4 | CGHV60075D5-GP4 |
| Product Name | RF Power Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Transistor Technology / Material | GaN | |
| Package Type | Die | Die |
| Power Gain | 17 dB |
