CGHV40030P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S and C-Band amplifier applications. The datasheet specifications are based on a 0.96 - 1.4 GHz amplifier. The CGHV40030P operates on a 50 volt rail circuit while housed in a pill package.
RF Mosfet HEMT 50V 150mA 6GHz 16dB 30W 440196
RF MOSFET HEMT 50V 440196
| Richardson RFPD | DigiKey | Acme Chip Technology Co., Limited | |
|---|---|---|---|
| Product Category | RF Transistors | Transistors | RF Transistors |
| Product Number | CGHV40030P | 1465-CGHV40030P-ND | CGHV40030P |
| Product Name | RF Power Transistor | RF FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Transistor Technology / Material | GaN | ||
| Package Type | Ceramic Flangeless | 440196 | 440196 |
| Power Gain | 16.6 dB |
