RF Mosfet HEMT 50V 150mA 6GHz 16dB 30W 440196
CGHV40030P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S and C-Band amplifier applications. The datasheet specifications are based on a 0.96 - 1.4 GHz amplifier. The CGHV40030P operates on a 50 volt rail circuit while housed in a pill package.
RF MOSFET HEMT 50V 440196
| DigiKey | Richardson RFPD | Acme Chip Technology Co., Limited | |
|---|---|---|---|
| Product Category | Transistors | RF Transistors | RF Transistors |
| Product Number | 1465-CGHV40030P-ND | CGHV40030P | CGHV40030P |
| Product Name | RF FETs, MOSFETs | RF Power Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | 440196 | Ceramic Flangeless | 440196 |
| Transistor Technology / Material | GaN | ||
| Power Gain | 16.6 dB |
