CGHV35150P is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35150P ideal for 2.9 - 3.5 GHz S-Band radar amplifier applications. The transistor is supplied in a pill package.
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | CGHV35150P |
| Product Name | RF Power Transistor |
| Transistor Technology / Material | GaN |
