CGHV1J025D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 um gate length fabrication process. This GaN-on-SiC product offers superior high frequency, high efficiency features. It is ideal for a variety of applications operating from 10 MHz to 18 GHz at 40 V with a high breakdown voltage.
RF MOSFET HEMT 40V DIE
| Richardson RFPD | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|
| Product Category | RF Transistors | RF Transistors |
| Product Number | CGHV1J025D-GP4 | CGHV1J025D-GP4 |
| Product Name | RF Power Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Transistor Technology / Material | GaN | |
| Package Type | Die | Die |
| Power Gain | 17 dB |
