CGH35060P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060P2 ideal for 3.1-3.5 GHz S-band pulsed amplifier applications. The transistor is supplied in a pill package.
| Richardson RFPD | |
|---|---|
| Product Category | RF Transistors |
| Product Number | CGH35060P2 |
| Product Name | RF Power Transistor |
| Transistor Technology / Material | GaN |
