MACOM RF FETs, MOSFETs CGH27060F

Description
RF Mosfet HEMT 28V 300mA 3GHz 13dB 60W 440193
Request a Quote Datasheet
Description
RF Mosfet HEMT 28V 300mA 3GHz 13dB 60W 440193
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
RF FETs, MOSFETs - 1465-CGH27060F-ND - DigiKey
Thief River Falls, MN, United States
RF FETs, MOSFETs
1465-CGH27060F-ND
RF FETs, MOSFETs 1465-CGH27060F-ND
RF Mosfet HEMT 28V 300mA 3GHz 13dB 60W 440193

RF Mosfet HEMT 28V 300mA 3GHz 13dB 60W 440193

Buy Now Datasheet
RF Power Transistor - CGH27060F - Richardson RFPD
Downers Grove, IL, United States
RF Power Transistor
CGH27060F
RF Power Transistor CGH27060F
CGH27060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for VHF, Comms, 3G, 4G, LTE, 2.3-2.9GHz WiMAX and BWA amplifier applications. The unmatched transistor is supplied in a ceramic/metal flange package.

CGH27060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for VHF, Comms, 3G, 4G, LTE, 2.3-2.9GHz WiMAX and BWA amplifier applications. The unmatched transistor is supplied in a ceramic/metal flange package.

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - CGH27060F - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
CGH27060F
Discrete Semiconductor Products - Transistors - FETs, MOSFETs CGH27060F
RF MOSFET HEMT 28V 440193

RF MOSFET HEMT 28V 440193

Supplier's Site

Technical Specifications

  DigiKey Richardson RFPD Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors RF Transistors RF Transistors
Product Number 1465-CGH27060F-ND CGH27060F CGH27060F
Product Name RF FETs, MOSFETs RF Power Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type 440193 Ceramic Flanged 440193
Transistor Technology / Material GaN
Power Gain 13 dB
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