CGH21240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH21240F ideal for 1.8-2.3GHz WCDMA and LTE amplifier applications. The transistor is supplied in a ceramic/metal flange package.
RF Mosfet HEMT 28V 1A 1.8GHz ~ 2.3GHz 15dB 240W 440117
RF MOSFET HEMT 28V 440117
| Richardson RFPD | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | RF Transistors | Transistors | RF Transistors |
| Product Number | CGH21240F | 1465-CGH21240F-ND | CGH21240F |
| Product Name | RF Power Transistor | RF FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Transistor Technology / Material | GaN | ||
| Package Type | Ceramic Flanged | 440117 | 440117 |
| Power Gain | 15 dB |
