The IXTP182N055T is an N-channel enhancement mode TrenchMVTM power MOSFET designed for high-current switching applications such as automotive systems, motor drives, and DC/DC converters. It is packaged in a TO-220AB case with a weight of 3.0 g and has dimensions consistent with the TO-220AB outline. The device is rated for a drain-source voltage of 55 V and a continuous drain current of 182 A at 25°C, with a maximum junction temperature of 175°C. It features an ultra-low on-resistance of 3.8 to 5.0 mΩ at 10 V gate-source voltage and 25 A drain current, and is avalanche rated with an energy rating of 1.0 J. The device supports unclamped inductive switching and has a thermal resistance from junction to case of 0.50 °C/W. It meets RoHS standards and is designed for easy mounting with low package inductance.
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(ON), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXTP182N055T |
| Product Name | Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Trench Gate - Series: Gen1 - IXTP182N055T |
| Polarity | N-Channel |
