The IXTP120N04T2 is an N-channel enhancement mode MOSFET designed for high-current switching applications such as automotive engine control, synchronous buck converters, and DC/DC converters. It is packaged in a TO-220 case with a weight of 3.0 g and features a drain-source voltage rating of 40 V, a continuous drain current of 120 A at 25°C, and a maximum junction temperature of 175°C. The device has a maximum on-resistance of 6.1 mΩ at 10 V gate voltage and 25 A drain current. It is avalanche rated, RoHS compliant, and incorporates TrenchT2 technology for low RDS(on) and fast intrinsic rectifier performance. The mounting torque for the TO-220 package is 1.13 Nm (10 lb.in).
These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. Furthermore, these devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost. Advantages: Eliminates multiple paralleled lower current rated MOSFET devices Provides the ability to control more power within a smaller footprint Improves overall system reliability and cost High current capability (up to 600A) Low RDS(ON) and gate charge (Qg) Incorporates Littelfuse HiPerFETTM technology for fast power switching performance Avalanches capabilities
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXTP120N04T2 |
| Product Name | 40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options |
| Polarity | N-Channel |
