Littelfuse, Inc. 135V - 200V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options IXTH60N20X4

Description
The new 200V X4-Class Ultra Junction MOSFETs are available in 60A nominal current rating and TO-220 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on). This new family exhibits significant reduction in the Figure of Merit (FOM) RDS(on) x Qg compared to its predecessor X3. These benefits enable designers to achieve higher efficiency and increased power density. Low on-state resistance RDS(ON) = 21mΩ Low thermal resistance RthJC = 0.6K/W Low gate charge Qg = 33 nC 175°C operating junction temperature
  • 135V - 200V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options - IXTH60N20X4 - Littelfuse, Inc.
    Littelfuse, Inc.
Datasheet
Description
The new 200V X4-Class Ultra Junction MOSFETs are available in 60A nominal current rating and TO-220 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on). This new family exhibits significant reduction in the Figure of Merit (FOM) RDS(on) x Qg compared to its predecessor X3. These benefits enable designers to achieve higher efficiency and increased power density. Low on-state resistance RDS(ON) = 21mΩ Low thermal resistance RthJC = 0.6K/W Low gate charge Qg = 33 nC 175°C operating junction temperature
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135V - 200V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options - IXTH60N20X4 - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
135V - 200V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options
IXTH60N20X4
135V - 200V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options IXTH60N20X4
The new 200V X4-Class Ultra Junction MOSFETs are available in 60A nominal current rating and TO-220 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on). This new family exhibits significant reduction in the Figure of Merit (FOM) RDS(on) x Qg compared to its predecessor X3. These benefits enable designers to achieve higher efficiency and increased power density. Low on-state resistance RDS(ON) = 21mΩ Low thermal resistance RthJC = 0.6K/W Low gate charge Qg = 33 nC 175°C operating junction temperature

The new 200V X4-Class Ultra Junction MOSFETs are available in 60A nominal current rating and TO-220 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on). This new family exhibits significant reduction in the Figure of Merit (FOM) RDS(on) x Qg compared to its predecessor X3. These benefits enable designers to achieve higher efficiency and increased power density. Low on-state resistance RDS(ON) = 21mΩ Low thermal resistance RthJC = 0.6K/W Low gate charge Qg = 33 nC 175°C operating junction temperature

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Technical Specifications

  Littelfuse, Inc.
Product Category Transistors
Product Number IXTH60N20X4
Product Name 135V - 200V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options
Polarity N-Channel
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