Littelfuse, Inc. 2000V - 3000V N-Channel Standard Power MOSFETs IXTH3N200P3HV

Description
Polar3™ Standard Power MOSFETs are suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, laser and x-ray generation systems, high-voltage automated test equipment, and energy tapping applications from the power grid. Due to the positive temperature coefficient of their on-state resistance, these high-voltage Power MOSFETs can be operated in parallel, thereby eliminating the need for lower voltage, series-connected devices and enabling cost-effective power systems. Other benefits include component reduction in gate drive circuitry, simpler design, improved reliability, and PCB space saving. Advantages: Easy to mount Space savings High power density Proprietory high-voltage packages High blocking voltage Positive temperature coefficient of RDSON
Datasheet
Description
Polar3™ Standard Power MOSFETs are suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, laser and x-ray generation systems, high-voltage automated test equipment, and energy tapping applications from the power grid. Due to the positive temperature coefficient of their on-state resistance, these high-voltage Power MOSFETs can be operated in parallel, thereby eliminating the need for lower voltage, series-connected devices and enabling cost-effective power systems. Other benefits include component reduction in gate drive circuitry, simpler design, improved reliability, and PCB space saving. Advantages: Easy to mount Space savings High power density Proprietory high-voltage packages High blocking voltage Positive temperature coefficient of RDSON
Datasheet

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2000V - 3000V N-Channel Standard Power MOSFETs - IXTH3N200P3HV - Littelfuse, Inc.
Rosemont, IL, United States
2000V - 3000V N-Channel Standard Power MOSFETs
IXTH3N200P3HV
2000V - 3000V N-Channel Standard Power MOSFETs IXTH3N200P3HV
Polar3™ Standard Power MOSFETs are suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, laser and x-ray generation systems, high-voltage automated test equipment, and energy tapping applications from the power grid. Due to the positive temperature coefficient of their on-state resistance, these high-voltage Power MOSFETs can be operated in parallel, thereby eliminating the need for lower voltage, series-connected devices and enabling cost-effective power systems. Other benefits include component reduction in gate drive circuitry, simpler design, improved reliability, and PCB space saving. Advantages: Easy to mount Space savings High power density Proprietory high-voltage packages High blocking voltage Positive temperature coefficient of RDSON

Polar3™ Standard Power MOSFETs are suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, laser and x-ray generation systems, high-voltage automated test equipment, and energy tapping applications from the power grid. Due to the positive temperature coefficient of their on-state resistance, these high-voltage Power MOSFETs can be operated in parallel, thereby eliminating the need for lower voltage, series-connected devices and enabling cost-effective power systems. Other benefits include component reduction in gate drive circuitry, simpler design, improved reliability, and PCB space saving. Advantages: Easy to mount Space savings High power density Proprietory high-voltage packages High blocking voltage Positive temperature coefficient of RDSON

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Technical Specifications

  Littelfuse, Inc.
Product Category Transistors
Product Number IXTH3N200P3HV
Product Name 2000V - 3000V N-Channel Standard Power MOSFETs
Polarity N-Channel
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