Littelfuse, Inc. 200V - 2500V N-Channel Linear Power MOSFETs with Extended FBSOAs IXTH30N50L

Description
When Power MOSFETs are used in the linear-mode operation, as opposed to their conventional switch-mode one, they are required to endure substantially high thermal and electrical stresses due to the simultaneous occurrence of high drain voltages and currents; these extreme stresses can cause typical devices to fail. Littelfuse Linear MOSFETs have been designed to address these kinds of device failures – the FBSOAs are “extended” when the positive feedback of electro-thermal instability is suppressed, giving rise to larger “operating windows.” The FBSOAs are guaranteed at 75°C. Designed for linear operation Guaranteed FBSOA at 75°C Avalanche rated International standard packages UL 94 V-0 Flammability qualified (molding epoxies)
Datasheet
Description
When Power MOSFETs are used in the linear-mode operation, as opposed to their conventional switch-mode one, they are required to endure substantially high thermal and electrical stresses due to the simultaneous occurrence of high drain voltages and currents; these extreme stresses can cause typical devices to fail. Littelfuse Linear MOSFETs have been designed to address these kinds of device failures – the FBSOAs are “extended” when the positive feedback of electro-thermal instability is suppressed, giving rise to larger “operating windows.” The FBSOAs are guaranteed at 75°C. Designed for linear operation Guaranteed FBSOA at 75°C Avalanche rated International standard packages UL 94 V-0 Flammability qualified (molding epoxies)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
200V - 2500V N-Channel Linear Power MOSFETs with Extended FBSOAs - IXTH30N50L - Littelfuse, Inc.
Rosemont, IL, United States
200V - 2500V N-Channel Linear Power MOSFETs with Extended FBSOAs
IXTH30N50L
200V - 2500V N-Channel Linear Power MOSFETs with Extended FBSOAs IXTH30N50L
When Power MOSFETs are used in the linear-mode operation, as opposed to their conventional switch-mode one, they are required to endure substantially high thermal and electrical stresses due to the simultaneous occurrence of high drain voltages and currents; these extreme stresses can cause typical devices to fail. Littelfuse Linear MOSFETs have been designed to address these kinds of device failures – the FBSOAs are “extended” when the positive feedback of electro-thermal instability is suppressed, giving rise to larger “operating windows.” The FBSOAs are guaranteed at 75°C. Designed for linear operation Guaranteed FBSOA at 75°C Avalanche rated International standard packages UL 94 V-0 Flammability qualified (molding epoxies)

When Power MOSFETs are used in the linear-mode operation, as opposed to their conventional switch-mode one, they are required to endure substantially high thermal and electrical stresses due to the simultaneous occurrence of high drain voltages and currents; these extreme stresses can cause typical devices to fail. Littelfuse Linear MOSFETs have been designed to address these kinds of device failures – the FBSOAs are “extended” when the positive feedback of electro-thermal instability is suppressed, giving rise to larger “operating windows.” The FBSOAs are guaranteed at 75°C. Designed for linear operation Guaranteed FBSOA at 75°C Avalanche rated International standard packages UL 94 V-0 Flammability qualified (molding epoxies)

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Transistors
Product Number IXTH30N50L
Product Name 200V - 2500V N-Channel Linear Power MOSFETs with Extended FBSOAs
Polarity N-Channel
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors (BJT) - Single - 2SA1626-AZ - 855051-2SA1626-AZ - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
60 V, 1 A NPN medium power transistors - BC55-10PA-QX - Nexperia B.V.
Specs
Package Type SOT1061 SOT1061
View Details
2 suppliers
DC - 4.0 GHz, 200 Watt Peak, 40 Watt Avg. Power, 50 Volt, GaN RF Power Transistor - TGF2819-FS - Qorvo
Specs
Transistor Technology / Material DC - 4.0 GHz, 200 Watt Peak, 40 Watt Avg. Power, 50 Volt, GaN RF Power Transistor
Package Type NI-360
Transistor Grade / Operating Range Military
View Details