N-channel enhancement mode MOSFET for high-frequency switching applications, rated at 1000 V drain-source voltage and 12 A continuous drain current, with a maximum on-state resistance of 1.05 Ω at 10 V gate-source voltage. Housed in a TO-247 AD package measuring 20.80 to 21.46 mm in length and 15.75 to 16.26 mm in width, with a drain tab. Features include avalanche rating up to 1.0 J, unclamped inductive switching capability, low gate charge of 77 nC, and a reverse recovery time of 250 ns. Operates from −55 °C to +150 °C junction temperature. Complies with RoHS standards and is qualified under AEC-Q200 for automotive applications.
Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 Product overview: IXFH12N100F from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 12A, 1000V, 1.05ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12A, 1000V, 1.05ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH12N100F can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IXFH12N100F |
| Product Name | N-Channel 12A 1000V 1.05ohm MOSFET Transistor |
