Linear Systems JFETs LS5912 SOIC 8L-B

The LS5912 is a monolithic dual N-channel JFET amplifier designed for low-noise wideband applications, available in an 8-pin SOIC package. It features a typical transconductance of 4000 µS at 100 MHz, an input noise voltage of 4 nV/√Hz at 10 kHz, and a gate-to-source breakdown voltage of -25 V. The device supports a maximum power dissipation of 500 mW and operates with a junction temperature range of -55 °C to +150 °C. Matching characteristics include a differential gate-to-source cutoff voltage of up to 40 mV and a gate-to-gate isolation current of ±1 µA.