The 2N5115 is a P-channel JFET switch designed for low on-resistance and low capacitance applications. It is packaged in a TO-18-3 case and operates with a maximum gate-to-source voltage of 30V and a continuous power dissipation of 500mW at 25°C. The device exhibits a typical drain-to-source on-resistance of 100Ω at VGS = 0V and ID = -1mA, with a gate-to-source cutoff voltage between 3V and 6V. It has a reverse transfer capacitance of 6 to 7pF at 1MHz and a forward transconductance of 4.5mS. Maximum junction operating temperature is 150°C. The part meets absolute ratings for storage temperatures from -65°C to 150°C. Switching times are specified under test conditions with VDD = -6V, VGG = 12V, and RL = 910Ω. The 2N5115 is part of a series that includes the 2N5114 and 2N5116 variants, all sharing primary electrical characteristics.
JFET P-Channel 30V 500mW Through Hole TO-18-3
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 4004-2N5115TO-183L-ND |
| Product Name | JFETs |
| Polarity | P-Channel |