Kioxia America, Inc Memory THGJFJT2T85BAT0

Description
512GB UFS V4.0
  • Memory - THGJFJT2T85BAT0 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Datasheet
Description
512GB UFS V4.0
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - THGJFJT2T85BAT0 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Memory
THGJFJT2T85BAT0
Memory THGJFJT2T85BAT0
512GB UFS V4.0

512GB UFS V4.0

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global)
Product Category Memory Chips
Product Number THGJFJT2T85BAT0
Product Name Memory
Memory Category FLASH - NAND
Data Rate 2320 MHz
Operating Temperature -25 to 85 C (-13 to 185 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 27S21ADM/B - Quarktwin Technology Ltd.
Rochester Electronics
Memory
27S21ADM/B
View Details
3 suppliers
Flash Memory - 1882785 - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1882785
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details
Memory - SMJ44400 - Micross Components, Inc.
Micross Components, Inc.
Memory
SMJ44400
Specs
Memory Category DRAM; DRAM Chip
Access Time 80 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 5140912Y07 AB - Quarktwin Technology Ltd.
Infineon Technologies AG
Memory
5140912Y07 AB
View Details
2 suppliers