JSMicro Semiconductor Co., Ltd. Transistors FDA59N30-JSM

Description
300V 60A 500W 30mΩ@10V,25A 1 N-Channel TO-247 MOSFETs ROHS
  • Transistors - FDA59N30-JSM - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
300V 60A 500W 30mΩ@10V,25A 1 N-Channel TO-247 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - FDA59N30-JSM - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
FDA59N30-JSM
Transistors FDA59N30-JSM
300V 60A 500W 30mΩ@10V,25A 1 N-Channel TO-247 MOSFETs ROHS

300V 60A 500W 30mΩ@10V,25A 1 N-Channel TO-247 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number FDA59N30-JSM
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

DC-6 GHz, 40 Watt, 50 Volt GaN RF Power Transistor - QPD1035L - Qorvo
Qorvo
DC-6 GHz, 40 Watt, 50 Volt GaN RF Power Transistor
QPD1035L
Specs
Transistor Technology / Material DC-6 GHz, 40 Watt, 50 Volt GaN RF Power Transistor
Package Type Flanged
Transistor Grade / Operating Range Military
View Details
2 suppliers
Single FETs, MOSFETs - 448-AIMBG75R060M2HXTMA1TR-ND - DigiKey
Infineon Technologies AG
Single FETs, MOSFETs
AIMBG75R060M2HXTMA1
Specs
Polarity N-Channel
Transistor Technology / Material Silicon Carbide
Package Type TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
View Details
TRANSISTORS - Transistors (BJT) - Single - 2SA1626-AZ - 855051-2SA1626-AZ - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors (BJT) - Single - 2SA1626-AZ
2SA1626-AZ
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
Transistor - 26175858 - Radwell International
Allen-Bradley / Rockwell Automation
Transistor
SP-140578
View Details