The MXB12R600DPHFC is an obsolete 600 V, 160 mΩ, 18 A silicon MOSFET with an integrated HiPerDynFRED diode, designed for boost configuration in power factor correction and switch-mode power supplies. It is packaged in an ISOPLUS i4-Pac™ case with a backside DCB ceramic, measuring 21.34 mm by 20.29 mm, and has an isolation voltage of 2500 V~. The device is RoHS compliant, meets UL 94 V-0 for epoxy flammability, and supports operation from -40°C to 125°C with a junction-to-case thermal resistance of 0.95 K/W. The integrated diode has a maximum reverse voltage of 600 V and a typical reverse recovery time of 145 ns.
MOSFET N-CH 600V 15A
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 238-MXB12R600DPHFC-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel |