IXYS Corporation Discrete Semiconductor Products - Transistors - IGBTs MWI50-12E7

Description
IGBT MODULE 1200V 90A 350W E2
Description
IGBT MODULE 1200V 90A 350W E2

Suppliers

Company
Product
Description
Supplier Links
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
MWI50-12E7
Discrete Semiconductor Products - Transistors - IGBTs MWI50-12E7
IGBT MODULE 1200V 90A 350W E2

IGBT MODULE 1200V 90A 350W E2

Supplier's Site

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number MWI50-12E7
Product Name Discrete Semiconductor Products - Transistors - IGBTs
Packing Method Box
Unlock Full Specs
to access all available technical data

Similar Products

IGBTs - 5053245 - RS Components, Ltd.
RS Components, Ltd.
Specs
Polarity N-Channel
Package Type Semitrans3
Number of units in IC 2
View Details
 - 2ED21844S06JXUMA1 - Rochester Electronics
Infineon Technologies AG
Specs
Package Type PG-DSO-14
Packing Method Tape Reel; Tape & Reel
View Details
TRANSISTORS - Transistors (BJT) - Single - FGH40T65SHD - 871758-FGH40T65SHD - Win Source Electronics
Specs
Package Type SOT3
Features Bipolar (BJT) Transistor
View Details
IGBT Module - 21666045 - Radwell International
Fuji Electric Corp. of America
View Details